Organoselenium Precursors for Atomic Layer Deposition

Atomic layer deposition (ALD): from precursors to thin film structures

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...

Atomic layer deposition: an overview.

Atomic Layer Deposition of TiO

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Atomic layer deposition of ZnS nanotubes.

We report on the growth of high-aspect-ratio (approximately > 300) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 degrees C. Various characterization techniques are employed to gain information on the composition, morphology and crysta...

Atomic Layer Deposition of Aluminum Oxide

I Acknowledgements II Dedication III List of Figures V